2n5679 ? 2N5680 comset semiconductors 1/3 p p n n p p s s w w i i t t c c h h i i n n g g t t r r a a n n s s i i s s t t o o r r s s the 2n5679 and 2N5680 are silicon expitaxial planar pnp transistors in jedec to-39 metal case. they are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. the complementary npn types are the 2n5681 and 2n5682 . compliance to rohs. absolute maximum ratings symbol ratings value unit 25679 2N5680 v ceo collector-emitter voltage i b =0 -100 -120 v v cbo collector-base voltage i e =0 -100 -120 v v ebo emitter-base voltage i c =0 -4 v i c collector current -1 a i b base current -500 ma p d total power dissipation t amb = 25c 1 w t case = 25c 10 t j junction temperature 200 c t st g storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 175 c/w r thj-c thermal resistance, junction to case 17.5 c/w b c e www.datasheet.net/ datasheet pdf - http://www..co.kr/
2n5679 ? 2N5680 24/09/2012 comset semiconductors 2/3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ mx unit i cbo collector cutoff current v cb = -100 v, i e = 0 2n5679 - - -1 a v cb = -120 v, i e = 0 2N5680 i ceo collector cutoff current v ce = -70 v, i b = 0 2n5679 - - -10 a v ce = -80 v, i b = 0 2N5680 i cev collector cutoff current v ce = -100 v, v be = 1.5 v 2n5679 - - -1 a v ce = -120 v, v be = 1.5 v 2N5680 v ce = -100 v, v be = 1.5 v t c = 150c 2n5679 - - -1 ma v ce = -120 v, v be = 1.5 v t c = 150c 2N5680 i ebo emitter cutoff current v be = -4.0 v, i c = 0 2n5679 - - -1 a 2N5680 v ceo(sus) collector emitter sustaining voltage (*) i c = -10 ma, i b = 0 2n5679 -100 - - v 2N5680 -120 - - v ce(sat) collector-emitter saturation voltage (*) i c = -250 ma i b = -25 ma 2n5679 - - -0.6 v 2N5680 i c = -500 ma i b = -50 ma 2n5679 - - -1 2N5680 i c = -1 a i b = -200 ma 2n5679 - - -2 2N5680 v be base-emitter voltage (*) i c = -250 ma, v ce = -2 v 2n5679 - - -1 v 2N5680 h fe dc current gain (*) i c = -250 ma, v ce = -2 v 2n5679 40 - 150 2N5680 i c = -1 a, v ce = -2 v 2n5679 5 - - 2N5680 f t transition frequency i c = -100 ma, v ce = -10 v f = 10 mhz 2n5679 30 - - mhz 2N5680 c ob output capacitance i e = 0, v cb = -20 v f = 1mhz 2n5679 - - 50 pf 2N5680 h fe small signal current gain i c = -200 ma, v ce = -1.5 v f = 1 khz 2n5679 40 - - - 2N5680 (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
2n5679 ? 2N5680 24/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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